Navitas Army Contract Targets 10 kV SiC Chips
Navitas Army contract selection for ALATTIS to develop 10 kV SiC IGBTs positions the firm in domestic SiC supply and signals a government R&D pathway.
KEY TAKEAWAYS
- The U.S. Army selected Navitas for ALATTIS to develop 10 kV SiC IGBTs and PiN diodes.
- The project funds prototype work to validate a domestic manufacturing process for ultra-high-voltage SiC devices rather than production.
- The company disclosed no contract value, schedule, or revenue impact, leaving financial materiality unknown.
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Navitas Semiconductor (NVTS) said on Sept. 28, 2026, that the U.S. Army selected it for the ALATTIS prototype program to develop 10 kV silicon-carbide insulated-gate bipolar transistors (IGBTs). The company described the Navitas Army contract as a step toward establishing domestic high-voltage manufacturing and expanding its defense-market presence.
ALATTIS Prototype Program and Technical Scope
The company said in a Sept. 28 press release that the U.S. Army chose it for the ALATTIS program—Accelerated, Large-Area, 10 kV SiC IGBT—after a competitive evaluation among U.S. silicon-carbide technology firms. The project is sponsored by the Army Research Laboratory, which operates under the U.S. Army Combat Capabilities Development Command (DEVCOM), with support from the Joint Experimentation and Technology Accelerator.
The program’s near-term goal is to develop, execute, and validate a domestic manufacturing process for ultra-high-voltage silicon-carbide power semiconductor devices rated at or above 10 kV through iterative design, fabrication, and testing. The targeted devices include silicon-carbide IGBTs, which are high-power switching components, and associated PiN diodes, used for power rectification. Navitas said the work aims to advance high-power electronics for mission-critical military systems and critical infrastructure.
Disclosure and Outlook
The announcement did not disclose the contract’s dollar value, cost-sharing terms, payment schedule, expected revenue, gross-margin impact, program duration, or production commitments. No SEC filing, government award notice, or official transcript was identified; the company press release remains the primary source.
Secondary reports noted that the planned 10 kV IGBTs would use Navitas’s trench-assisted planar architecture integrated with PiN diodes, though the primary release did not provide detailed device specifications or performance targets. The company framed the program as prototype development and manufacturing process advancement rather than a production award. It did not quantify the addressable market or indicate that the program will materially affect Navitas’s financial results.
The selection places Navitas within a government-sponsored research and development pathway for ultra-high-voltage silicon-carbide technology and aligns the company with efforts to strengthen domestic SiC manufacturing. This program establishes an explicit R&D channel tied to defense and critical infrastructure applications that could influence Navitas’s development priorities in high-voltage power electronics.
“The ALATTIS prototype project will develop, execute, and validate a novel domestic manufacturing process for ultra-high-voltage (≥10 kV) silicon carbide power semiconductor devices through iterative design, fabrication, and testing,” the company said in its release.
